Refined Models of a Three-Phase Transistor Converter
DOI:
https://doi.org/10.24160/0013-5380-2026-4-29-40Keywords:
autonomous voltage inverter, parasitic inductance, dead time, switching overvoltage, pre-modulation, energy loss, temperature, simulation, machine time costsAbstract
The article describes mathematical and computer models of a three-phase transistor bridge inverter (an IGBT bridge). The models take into account the switching time of semiconductors, the "dead time" during their switching, the "parasitic" inductances of circuits, snubber circuits, and the control quantization level. Pre-modulation of control voltages to increase the equipment voltage capacity factor, as well as 3-pulse and 6-pulse pre-modulations to reduce energy loss in the IGBT modules and in the RC circuits are taken into account. Possibilities for taking into account the transistor and bypass diode heating processes are provided. To ensure high computation speed of the models, the methodology for calculating systems that involves breaking them down into subsystems interconnected by dependent voltage and current sources is used. The computer models have been developed in C++ for calculations in the ComSim environment, as well as in the new FastMod environment, which uses multi-core version of processors to implement multi-threaded computing. When using models developed in these three environments, it has been found that, given the identical initial parameters of the system analyzed and with identical calculation parameters (calculation time step, etc.), all three models give the same results (the differences, if any, are insignificant). In terms of machine time costs for calculations, the FastMod environment has an advantage, the ComSim going second. It is noted that in a three-phase IGBT bridge, it is advisable to use pre-modulation to increase the equipment voltage capacity factor, as well as 6-pulse pre-modulation (bringing the control voltages closer to limitations by introducing zero sequence components), which makes it possible to reduce the total power loss by about a third and reduce the heating of semiconductor elements.
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