Investigation of the Surface of Thin Amorphous Films for a Ferroelectric Phase Shifter
DOI:
https://doi.org/10.24160/0013-5380-2026-6-35-41Keywords:
thin film, barium-strontium titanate, surface morphology, roughness, surface jaggedness, nonlinearity factor, dielectric constant, tgδAbstract
The article presents the results of studying the surfaces of two series of thin amorphous films made of barium strontium titanate (BST) on sytall substrates with a roughness of 39 and 23 nm, obtained using the RF ion-plasma deposition method. It has been found that at the deposition initial stage, the substrate depressions are filled with the film material with the subsequent growth of the nuclei with the surface shading effect. The film roughness increases with the film thickness, but it does not exceed the substrate roughness, whereas its jaggedness decreases, reaching a value of 12% at a film thickness of 323 nm for the first series of samples. The jaggedness of the second series of samples is approximately 10% less than that of the first series due to the lower roughness of the substrate used. During the studies of sample surfaces, the profile roughness height values at ten points, the average roughness step, the profile RMS slope, and their variances were also obtained. To identify the optimal thin film thickness with the prospect of its application in ferroelectric phase shifters, the surface morphology of the first series of films was compared with their dielectric characteristics, which were previously studied. As a result, it has been found that the main limitation on the film thickness is imposed by the tgδ, which is minimal (making equal to 0.014–0.015) at a film thickness of 150 to 250 nm.
References
1. Вендик О., Парнес М. Фазовращатели сканирующих антенн для радаров обзора территорий. – Беспроводные технологии, 2007, № 3 (8), с. 28–30.
2. Майстренко А., Кочемасов В. СВЧ-фазовращатели на основе сегнетоэлектриков. – СВЧ-электроника, 2017, № 1, с. 42–47.
3. Ашуров Х.Б. и др. Моделирование роста фрактального кластера на подложке при ионном облучении. – Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2011, № 6, c. 89–92.
4. Тумаркин А.В. и др. Влияние давления рабочего газа на компонентный состав и свойства тонких плёнок титаната бария-стронция. – Электроника и микроэлектроника СВЧ, 2016, т. 2, c. 124–128.
5. Старостенко В.В. и др. Динамика формирования поверхности проводящих пленок алюминия на аморфных подложках. – Прикладная физика, 2019, № 4, с. 60–65.
6. Митин Д.М. и др. Особенности роста тонких пленок аморфного кремния, полученных методом магнетронного распыления. – Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2015, № 6, c. 31–34.
7. Новак А.В., Новак В.Р., Смирнов Д.И. Эволюция морфологии поверхности при росте пленок аморфного и поликристаллического кремния. – Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2017, № 10, c. 18–25.
8. Ketov S.V. et al. Formation of Nanostructured Metallic Glass Thin Films Upon Sputtering. – Heliyon, 2017, vol. 3, No. 1, DOI: 10.1016/j.heliyon.2016.e00228.
9. Mwema F.M. et al. MicroStructure and Mechanical Properties of Sputtered Aluminum Thin Films. – Procedia Manufacturing, 2019, vol. 35, DOI: 10.1016/j.promfg.2019.06.038.
10. Ko E.C., Kang W., Han J.H. Improved Dielectric Constant and Leakage Current Characteristics of BaTiO3 Thin Film on SrRuO3 Seed Layer. – Journal of Alloys and Compounds, 2022, vol. 895, No. 1, DOI: 10.1016/j.jallcom.2021.162579.
11. Sharma V., Ghosh R.K., Kuanr B.K. Influence of Ferromagnetic Layer Thickness on the Gilbert Damping and Magnetocrystalline Anisotropy in PLD Grown Epitaxial Co2FeSi Heusler Alloy Thin Films. – Results in Surfaces and Interfaces, 2022, vol. 6, DOI: 10.1016/j.rsurfi.2022.100052.
12. Геращенко А.В. и др. Электрическое сопротивление и 1/f-флуктуации в тонких пленках титана. – Физика твердого тела, 2014, т. 56, № 7, с. 1386–1390.
13. Мухортов В.М., Юзюк Ю.И. Гетероструктуры на основе наноразмерных сегнетоэлектрических пленок. Ростов н/Д.: Изд-во ЮФУ, 2007, 84 с.
14. Серебрянников С.В., Носова Ю.М. Диэлектрические характеристики сегнетоэлектрического фазовращателя с тонкой аморфной пленкой. – Электричество, 2026, № 1, с. 23–29.
15. Мухортов В.М. и др. Наноразмерные сегнетоэлектрические пленки – новая активная среда для микроэлектроники. – Наука Юга России, 2022, т. 18, № 4, c. 33–43.
16. Носова Ю.М., Холодный Д.С. Определение электромагнитных характеристик тонких пленок электротехнических материалов с применением теории перколяции. – Электричество, 2025, № 10, с. 87–93.
#
1. Vendik O., Parnes M. Besprovodnye tekhnologii – in Russ. (Wireless Technology), 2007, No. 3 (8), pp. 28–30.
2. Maystrenko A., Kochemasov V. SVCh-elektronika – in Russ. (Microwave Electronics), 2017, No. 1, pp. 42–47.
3. Ashurov H.B. et al. Poverhnost’. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya – in Russ. (Surface. X-ray, Synchrotron, and Neutron Studies), 2011, No. 6, рр. 89–92.
4. Tumarkin A.V. et al. Elektronika i mikroelektronika SVCh – in Russ. (Microwave Electronics and Microelectronics), 2016, vol. 2, pp. 124–128.
5. Starostenko V.V. et al. Prikladnaya fizika – in Russ. (Applied Physics), 2019, No. 4, pp. 60–65.
6. Mitin D.M. et al. Poverhnost’. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya – in Russ. (Surface. X-ray, Synchrotron, and Neutron Studies), 2015, No. 6, pp. 31–34.
7. Novak A.V., Novak V.R., Smirnov D.I. Poverhnost’. Rentge-novskie, sinhrotronnye i neytronnye issledovaniya – in Russ. (Surface. X-ray, Synchrotron, and Neutron Studies), 2017, No. 10, pp. 18–25.
8. Ketov S.V. et al. Formation of Nanostructured Metallic Glass Thin Films Upon Sputtering. – Heliyon, 2017, vol. 3, No. 1, DOI: 10.1016/j.heliyon.2016.e00228.
9. Mwema F.M. et al. MicroStructure and Mechanical Properties of Sputtered Aluminum Thin Films. – Procedia Manufacturing, 2019, vol. 35, DOI: 10.1016/j.promfg.2019.06.038.
10. Ko E.C., Kang W., Han J.H. Improved Dielectric Constant and Leakage Current Characteristics of BaTiO3 Thin Film on SrRuO3 Seed Layer. – Journal of Alloys and Compounds, 2022, vol. 895, No. 1, DOI: 10.1016/j.jallcom.2021.162579.
11. Sharma V., Ghosh R.K., Kuanr B.K. Influence of Ferromag-netic Layer Thickness on the Gilbert Damping and Magnetocrystalline Anisotropy in PLD Grown Epitaxial Co2FeSi Heusler Alloy Thin Films. – Results in Surfaces and Interfaces, 2022, vol. 6, DOI: 10.1016/j.rsurfi.2022.100052.
12. Gerashchenko A.V. et al. Fizika tverdogo tela – in Russ. (Solid State Physics), 2014, vol. 56, No. 7, pp. 1386–1390.
13. Muhortov V.M., Yuzyuk Yu.I. Geterostruktury na osnove nanorazmernyh segnetoelektricheskih plenok (Heterostructures Based on Nanoscale Ferroelectric Films). Rostov n/D.: Izd-vo YuFU, 2007, 84 p.
14. Serebryannikov S.V., Nosova Yu.M. Elektrichestvo – in Russ. (Electricity), 2026, No. 1, pp. 23–29.
15. Muhortov V.M. et al. Nauka Yuga Rossii – in Russ. (Science of the South of Russia), 2022, vol. 18, No. 4, pp. 33–43.
16. Nosova Yu.M., Holodnyy D.S. Elektrichestvo – in Russ. (Electricity), 2025, No. 10, pp. 87–93
