Incoming Inspection of IGBT Static and Dynamic Parameters

Authors

  • Sergey I. VOL’SKIY
  • Dmitriy A. SOROKIN
  • Aleksandr S. KORNEV
  • Il’ya P. VIKULOV

DOI:

https://doi.org/10.24160/0013-5380-2026-6-42-53

Keywords:

IGBT module, IGBT static and dynamic parameters, incoming inspection, Simscape Electrical, parameter test bench

Abstract

The article substantiates the relevance to perform incoming inspection of static and dynamic parameters for power IGBT modules at the manufacturing plants of static converters. A test bench concept is proposed, according to which the module tested is compared with a reference sample, due to which it becomes possible to reduce the equipment costs and simplify its operation. The test bench power circuit diagram is given, and its operating principle is described. A mathematical model of electromagnetic processes is developed, based on which engineering expressions have been obtained for calculating the storage capacitor capacitance and choke inductance in static and dynamic characteristics measurement modes. To verify the proposed solutions, a simulation model has been developed in the MATLAB-Simulink (Simscape Electrical) environment. Experimental results obtained on a prototype test bench with a maximum voltage of 1200 V and current of 1300 A are given, which confirm the adequacy of the mathematical models and the setup functionality. Owing to its simple and reliable circuitry, the developed test bench represents an affordable alternative to specialized test equipment. The material is intended for specialists in power electronics and developers of testing equipment.

Author Biographies

Sergey I. VOL’SKIY

(Moscow Aviation Institute (National Research University), Moscow, Russia) – Professor of the Electric Power Engineering, Electromechanics and Biotechnical Systems Dept., Dr. Sci. (Eng.), Professor.

Dmitriy A. SOROKIN

Transconverter LLC, Moscow, Russia) – Head of the Technology Bureau, Cand. Sci. (Eng.).

Aleksandr S. KORNEV

(St. Petersburg State Marine Technical University, St. Petersburg, Russia) – Professor of the Electrical Engineering and Electrical Equipment of Ships Dept., Dr. Sci. (Eng.), Professor.

Il’ya P. VIKULOV

(St. Petersburg State Transport University, St. Petersburg, Russia) – Docent of the Electric Traction Dept., Cand. Sci. (Eng.).

References

1. Розанов Ю.К. Силовая электроника. Эволюция и применение. М.: Знак, 2018, 136 с.

2. Makarov S.N., Stephen R.L., Bitar J. Practical Electrical Engineering. Washington, USA: Worcester Polytechnic Institute, 2016, 986 p.

3. Зиновьев Г.С. Основы силовой электроники. Новосибирск: Изд-во Новосибирского государственного технического университета, 2009, 671 с.

4. IEC 60747-9(2019). Приборы полупроводниковые. Ч. 9. Дискретные устройства. Биполярные транзисторы с изолированным затвором (IGBT). М.: ИПС Стандарт, 2019.

5. ГОСТ 24297-2013. Верификация закупленной продукции. Организация проведения и методы контроля. М.: Стандартинформ, 2014, 15 с.

6. Volskiy N., Krapivnoi M., Sukhov D. The Charging Station for Fast-Charging Batteries of Two Electric Vehicles. – Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2024, pp. 199–204, DOI: 10.30420/566414036.

7. Машевич П. и др. Современные IGBT-модули на напряжение 1200-1700 В для энергосберегающих электроприводов. – Электроника: наука, технология, бизнес, 2015, № 9, с. 50–56.

8. Мелешин В.И. Транзисторная преобразовательная техника. М.: Техносфера, 2005, 623 с.

9. Резников С.Б. и др. Силовые полупроводниковые ключи для импульсных преобразователей электроэнергии с модульно-масштабируемой архитектурой. – Электротехника, 2019, № 2, с. 10–17.

10. Yang S. et al. Condition Monitoring for Device Reliability in Power Electronic Converters: A Review. – IEEE Transactions on Power Electronics, 2010, vol. 25, No. 11, pp. 2734–2752, DOI: 10.1109/TPEL.2010.2049377.

11. Skorokhod Y. et al. Novel Algorithm to Protect Converter from Impulsive Overvoltages by Using Neural Networks. – Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020, pp. 1480–1485.

12. Choi U.-M., Blaabjerg F., Lee K.-B. Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems. – IEEE Transactions on Power Electronics, 2015, vol. 30, No. 5, pp. 2517–2533, DOI: 10.1109/TPEL.2014.2373390.

13. Zeng G. et al. Experimental Investigation of Linear Cumulative Damage Theory with Power Cycling Test. – IEEE Transactions on Power Electronics, 2019, vol. 34, No. 5, pp. 4722–4728, DOI: 10.1109/TPEL.2018.2859479.

14. ГОСТ 18986.0-74. Диоды полупроводниковые. Методы измерения электрических параметров. Общие положения. М.: ИПК Изд-во стандартов, 2000, 3 с.

15. IGBT Double Pulse Test. Infineon Technologies, 2010 [Электрон. ресурс], URL: https://u.dianyuan.com/upload/space/2011/07/29/1311925659-501009.pdf (дата обращения 28.02.2025).

16. Белецкий А.Ф. Теория линейных электрических цепей. СПб.: Лань, 2022, 544 с.

17. Бессонов Л.А. Теоретические основы электротехники. Т.1. М.: Юрайт, 2023, 831 с.

18. Дьяконов В.П. MATLAB и SIMULINK для радиоинженеров. М.: ДМК Пресс, 2023, 977 с.

19. Bacha S., Munteanu I., Bratcu A.I. Power Electronic Converters Modeling and Control. London: Springer, 2014, 454 p.

20. Герман-Галкин С.Г. Виртуальные лаборатории полупроводниковых систем в среде MATLAB-SIMULINK. СПб.: Лань, 2013, 448 с.

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1. Rozanov Yu.K. Silovaya elektronika. Evolyutsiya i primenenie (Power Electronics. Evolution and Application). M.: Znak, 2018, 136 p.

2. Makarov S.N., Stephen R.L., Bitar J. Practical Electrical En-gineering. Washington, USA: Worcester Polytechnic Institute, 2016, 986 p.

3. Zinov’ev G.S. Osnovy silovoy elektroniki (Fundamentals of Power Electronics). Novosibirsk: Izd-vo Novosibirskogo gosudarstven-nogo tekhnicheskogo universiteta, 2009, 671 p.

4. IEC 60747-9(2019). Pribory poluprovodnikovye. Ch. 9. Dis-kretnye ustroystva. Bipolyarnye tranzistory s izolirovannym zatvorom (IGBT) (Semiconductor Devices - Part 9: Discrete Devices – Insulated-Gate Bipolar Transistors (IGBTs)). M.: IPS Standart, 2019.

5. GOST 24297-2013. Verifikatsiya zakuplennoy produktsii. Orga-nizatsiya provedeniya i metody kontrolya (Verification of Purchased Product. Organization and Methods of Control). M.: Standartinform, 2014, 15 p.

6. Volskiy N., Krapivnoi M., Sukhov D. The Charging Station for Fast-Charging Batteries of Two Electric Vehicles. – Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2024, pp. 199–204, DOI: 10.30420/566414036.

7. Mashevich P. et al. Elektronika: nauka, tekhnologiya, biznes – in Russ. (Electronics: Science, Technology, Business), 2015, No. 9, pp. 50–56.

8. Meleshin V.I. Tranzistornaya preobrazovatel’naya tekhnika (Transistor Conversion Technology). M.: Tekhnosfera, 2005, 623 p.

9. Reznikov S.B. et al. Elektrotekhnika – in Russ. (Electrical En-gineering), 2019, No. 2, pp. 10–17.

10. Yang S. et al. Condition Monitoring for Device Reliability in Power Electronic Converters: A Review. – IEEE Transactions on Power Electronics, 2010, vol. 25, No. 11, pp. 2734–2752, DOI: 10.1109/TPEL. 2010.2049377.

11. Skorokhod Y. et al. Novel Algorithm to Protect Converter from Impulsive Overvoltages by Using Neural Networks. – Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020, pp. 1480–1485.

12. Choi U.-M., Blaabjerg F., Lee K.-B. Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems. – IEEE Transactions on Power Electronics, 2015, vol. 30, No. 5, pp. 2517–2533, DOI: 10.1109/TPEL.2014.2373390.

13 Zeng G. et al. Experimental Investigation of Linear Cumulative Damage Theory with Power Cycling Test. – IEEE Transactions on Power Electronics, 2019, vol. 34, No. 5, pp. 4722–4728, DOI: 10.1109/TPEL.2018.2859479.

14. GOST 18986.0-74. Diody poluprovodnikovye. Metody izmere-niya elektricheskih parametrov. Obshchie polozheniya (Semiconductor Diodes. Measuring Methods for Electrical Parameters. General Requirements). M.: IPK Izd-vo standartov, 2000, 3 p.

15. IGBT Double Pulse Test. Infineon Technologies, 2010 [Electron. resource], URL: https://u.dianyuan.com/upload/space/2011/07/29/1311925659-501009.pdf (Accessed on 28.02.2025).

16. Beletskiy A.F. Teoriya lineynyh elektricheskih tsepey (Theory of Linear Electrical Circuits). SPb.: Lan’, 2022, 544 p.

17. Bessonov L.A. Teoreticheskie osnovy elektrotekhniki. T.1 (Theoretical Foundations of Electrical Engineering. Vol. 1). M.: Yurayt, 2023, 831 p.

18. D’yakonov V.P. MATLAB i SIMULINK dlya radioinzhenerov (MATLAB and SIMULINK for Radio Engineers). M.: DMK Press, 2023, 977 p.

19. Bacha S., Munteanu I., Bratcu A.I. Power Electronic Converters Modeling and Control. London: Springer, 2014, 454 p.

20. German-Galkin S.G. Virtual’nye laboratorii poluprovodni-kovyh sistem v srede MATLAB-SIMULINK (Virtual Laboratories of Semiconductor Systems in the MATLAB- SIMULINK Environment). SPb.: Lan’, 2013, 448 p

Published

2026-06-16

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